Neutron and Laser Irradiation of Si and Ge Diodes

被引：0
|
作者：
Ascazubi, Ricardo [1 ]
Rogelio Palomo, F. [2 ]
Manuel Quesada, Jose [3 ]
Cortes-Giraldo, Miguel Antonio [3 ]
Antonio Pavon, Jose [3 ,4 ]
机构：
[1] Intel Corp, Hillsboro, OR 97124 USA
[2] Univ Seville, Escuela Tecn Super Ingn, Dept Ingen Elect, E-41080 Seville, Spain
[3] Univ Seville, Dept Fis Atom Mol & Nucl, E-41080 Seville, Spain
[4] Conseil Europeen Rech Nucl, CH-1211 Meyrin, Switzerland
来源：
2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 | 2024年
关键词：
n_TOF; laser; neutron; SEE; SEU;
D O I：
10.1109/IRPS48228.2024.10529411
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Neutron irradiation of Si and Ge photo-diodes has been performed at the n TOF facility at CERN. Transients are collected and compared to those generated by ultrafast laser. Deposited charge is characterized as a function of the neutron energy.
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页数：5
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