Effects of Oxygen Vacancy on Ferroelectric Tunnel Junctions: An Ab initio Study

被引：0

作者：

Ji, Ning ^{[1
]}

Feng, Ning ^{[1
]}

Qiu, Jiajun ^{[1
]}

Cai, Puyang ^{[2
]}

Zhang, Lining ^{[1
]}

Wang, Runsheng ^{[2
]}

Huang, Ru ^{[2
]}

机构：

[1] Peking Univ, Sch Elect & Comp Engn, Shenzhen, Peoples R China

[2] Peking Univ, Sch Integrated Circuits, Beijing, Peoples R China

来源：

8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024 | 2024年

关键词：

Ferroelectric tunnel junctions; Transport; Oxygen vacancies; Ferroelectric HZO; Ab initio;

D O I：

10.1109/EDTM58488.2024.10511746

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Oxygen vacancies (OVs) usually exist in hafnium-based oxides in ferroelectric tunnel junctions (FTJs), which significantly influence the electron transport properties of FTJ. Here, a TiN/HZO/Pt FTJ device structure was constructed. The electron transport properties of FTJ with fourfold oxygen vacancies are studied using density functional theory combined with nonequilibrium Green's function. The perfect FTJ device structure model has a TER of 12 in the equilibrium state. After introducing defects, the TER ratio is as high as 559, and the depolarization field of the device is reduced. At the same time, the effect of oxygen vacancy on transmission at low resistance is greater than that at high resistance. Our results are significant for the design of FTJs, as OVs are generally unavoidable in ferroelectric oxides, and suggest changing the location of OVs to enhance TER.

引用

页码：493 / 495

页数：3

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