Deep level effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward zero dispersion effects

被引：1

作者：

Saro, Marco ^{[1
]}

de Pieri, Francesco ^{[1
]}

Carlotto, Andrea ^{[1
]}

Fornasier, Mirko ^{[1
]}

Rampazzo, Fabiana ^{[1
]}

De Santi, Carlo ^{[1
]}

Meneghesso, Gaudenzio ^{[1
]}

Meneghini, Matteo ^{[1
]}

Zanoni, Enrico ^{[1
]}

Bisi, Davide ^{[2
]}

Guidry, Matthew ^{[3
]}

Keller, Stacia ^{[3
]}

Mishra, Umesh ^{[3
]}

机构：

[1] Univ Padua, Dept Informat Engn, Padua, Italy

[2] Transphorm Inc, Castilian Dr, Goleta, CA 93117 USA

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024 | 2024年

关键词：

Current collapse; Deep levels; HEMT; N-Polar-GaN; Reliability; GAN; HEMTS; TRAPS;

D O I：

10.1109/IRPS48228.2024.10529479

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A full characterization of deep level effects in N-polar GaN-based HEMTs has been carried out by means of Drain Current Transient Spectroscopy (DCTS). The effect of ohmic contacts (alloyed or regrown), composition of AlGaN cap layer, and of the quality of the epitaxial layers have been studied. We show that the occurrence of an "antidispersion" effect, i.e. of a transient increase of ID during pulsed measurements, is due to a negative shift of the threshold voltage, related to the ionization of Fe-related defects. Through device and epitaxy optimization, dispersion-free devices, showing a 15% transient increase of drain current were obtained.

引用

页数：8

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