Ferroelectric BaTiO3 for Electro-Optic Modulators in Si Photonics

Over the past decade, Si-integrated single crystal thin film BaTiO3 (BTO) has emerged as a promising material platform for a new generation of electro-optic devices in silicon photonics. Despite being relatively young, the BTO technology has demonstrated impressive achievements, such as a very low V-pi, high bandwidth and linear frequency response, low insertion loss, low power operation and high-speed data transfer. These, combined with novel integration concepts, open a plethora of exciting novel applications in high-speed communication, computing, and sensing. Here we offer a quick snapshot of current developments in this field.