Above 48% Improvement of Wide SOA Enhancement Technology and Mechanism for 30-V SGT MOSFET on Application of Hot-Swap

被引：0

作者：

Ye, Jun ^{[1
,2
]}

Mo, Weiye ^{[1
]}

Xiao, Xuan ^{[2
]}

Liu, Haonan ^{[1
]}

Song, Yang ^{[2
]}

Huang, Wei ^{[1
]}

Zhang, Debin ^{[3
]}

Zhang, David. Wei ^{[1
]}

机构：

[1] Fudan Univ, Shanghai Inst Intelligent Elect & Syst, Sch Microelect, Shanghai, Peoples R China

[2] Wuxi China Resources Huajing Microelectr Co Ltd, Wuxi, Jiangsu, Peoples R China

[3] Shanghai Inst Space Power Sources, Shanghai, Peoples R China

来源：

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 | 2024年

关键词：

Wide Safe-Operation-Area Technology; SGT MOSFET; linear mode;

D O I：

10.1109/ISPSD59661.2024.10579571

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Based on the increasing requirements for automotive power devices used in linear mode, which require both wider Safe Operating Area (SOA) performance and lower Rds-on, SGT (RARS-SGT) with the Regional Allocate Resistance of Source is firstly developed in this paper. The performance of SOA is increased by 48% with the max I-d raising to 20A, while it is 13.5 A for Conventional SGT (C-SGT) in condition of V-d = V-g = 10 V and PT = 10 ms. In addition, it solves the problem that Rds-on is inevitably increasing in Channel Dummy SGT (CD-SGT) proposed by us earlier. The test and simulation results show that RARS-SGT has lower ZTC and weaker positive current-temperature feedback, because it sets up the self-ballast negative feedback mechanism to increase the source potential V-s and further also suppress the trigger of parasitic NPN.

引用

页码：402 / 405

页数：4