Effect of Li concentration on second harmonic generation from widegap ZnMgO thin films

被引:0
|
作者
Meng, Lei [1 ]
Yuan, Xueyou [2 ]
Gao, Junjie [3 ]
Liu, Wenkai [3 ]
Yang, Xiaoguang [4 ]
Zhai, Tianrui [1 ]
Yamada, Tomoaki [2 ,5 ]
机构
[1] Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
[2] Nagoya Univ, Dept Energy Engn, Nagoya 4648603, Japan
[3] North China Univ Technol, Sch Informat, Beijing 100144, Peoples R China
[4] Chinese Acad Sci, Inst Semicond, Lab Solid State Optoelect Informat Technol, Beijing 100083, Peoples R China
[5] Tokyo Inst Technol, MDX Res Ctr Element Strategy, Int Res Frontiers Initiat, Yokohama 2268503, Japan
基金
北京市自然科学基金;
关键词
POLARIZATION;
D O I
10.35848/1347-4065/ad66da
中图分类号
O59 [应用物理学];
学科分类号
摘要
Widegap ZnMgO thin films hold great potential for applications to the high-efficiency generation of deep UV laser via frequency conversion, because of low light propagation loss and reversible polarization. In this work, we studied the effect of Li concentration on the second harmonic generation (SHG) from a-axis oriented ZnMgO thin films with an optical bandgap of about 3.96 eV. The SHG intensity per unit thickness from the ZnMgO thin film with a small Li concentration is approximately 10.7 times larger than the one without Li incorporation. The Li incorporation obviously enlarges interplanar spacing of ( 1120 ) plane and reduces the leakage current by three orders of magnitude. X-ray photoelectron spectroscopy measurements suggest the Li incorporation enhances SHG via enhancing electronic polarization. These findings uncover defect complexes based on Li interstitials in oxygen octahedron play a very important role in enhancing the nonlinear polarization of widegap ZnMgO thin films under optical frequency electric field.
引用
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页数:5
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