Spatially resolved current density distribution in GaN-based flip-chip green mini-LEDs by microscopic hyperspectral imaging and modified two-level modeling

被引:0
|
作者
Lin, Yi [1 ]
Deng, Jingyu [1 ]
Li, Qiyao [1 ]
Zheng, Xi [1 ]
Zhu, Lihong [1 ]
Guo, Weijie [1 ]
Lin, Yue [1 ]
Chen, Zhong [1 ]
Lu, Yijun [1 ]
机构
[1] Xiamen Univ, Fujian Engn Res Ctr Solid State Lighting, Dept Elect Sci, Xiamen 361005, Peoples R China
来源
OPTICS EXPRESS | 2024年 / 32卷 / 06期
基金
中国国家自然科学基金;
关键词
D O I
10.1364/OE.518301
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A modified two-level model is proposed to study the spatially resolved current density distribution of GaN-based green miniaturized light-emitting diodes (mini-LEDs), combining with microscopic hyperspectral imaging. We found that the spatially resolved current density distribution reveals both the radiative and non-radiative recombination mappings, which can also be provided separately by this model. In addition, higher current density is not necessarily correlated with higher photon emission, especially for the regions around the electrode edges, where the high current density suggests current crowding and defect-related non-radiative recombination. The current density distribution of mini-LEDs is further verified by the laser-beam-induced current (LBIC) and the spatially resolved mappings of peak wavelength and FWHM. The modified two-level model also offers radiative/non-radiative mappings and is proved to be beneficial to determine the micro-zone current density distribution and to reveal the intrinsic radiative/non-radiative recombination mechanism of mini-LEDs. (c) 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码:8929 / 8936
页数:8
相关论文
共 5 条
  • [1] Origin of the Inhomogeneous Electroluminescence of GaN-Based Green Mini-LEDs Unveiled by Microscopic Hyperspectral Imaging
    Zheng, Xi
    Guo, Weijie
    Tong, Changdong
    Zeng, Peixin
    Chen, Guolong
    Gao, Yulin
    Zhu, Lihong
    Chen, Yayong
    Wang, Shirui
    Lin, Zhiyang
    Lu, Yijun
    Chen, Zhong
    ACS PHOTONICS, 2022, 9 (11) : 3685 - 3695
  • [2] The impacts of sidewall passivation via atomic layer deposition on GaN-based flip-chip blue mini-LEDs
    Lai, Shouqiang
    Lin, Wansheng
    Chen, Jinlan
    Lu, Tingwei
    Liu, Shibiao
    Lin, Yi
    Lu, Yijun
    Lin, Yue
    Chen, Zhong
    Kuo, Hao-Chung
    Guo, Weijie
    Wu, Tingzhu
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 55 (37)
  • [3] Enhanced performance of GaN-based visible flip-chip mini-LEDs with highly reflective full-angle distributed Bragg reflectors
    Shi, Lang
    Zhao, Xiaoyu
    Du, Peng
    Liu, Yingce
    Lv, Qimeng
    Zhou, Shengjun
    OPTICS EXPRESS, 2021, 29 (25): : 42276 - 42286
  • [4] Strategically constructed high-reflectivity multiple-stack distributed Bragg reflectors for efficient GaN-based flip-chip mini-LEDs
    Shi, Lang
    Sun, Yuechang
    Cui, Yongjin
    Du, Peng
    Zhuang, Jiaming
    Zhou, Shengjun
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2023, 56 (25)
  • [5] High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes
    Lv, Jiajiang
    Zheng, Chenju
    Chen, Quan
    Zhou, Shengjun
    Liu, Sheng
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (12): : 3150 - 3156