Study of the structural, morphological and optical properties of sprayed In2S3:Cl thin films

被引:0
|
作者
Toumi, M. [1 ]
Bouguila, N. [1 ]
Apolinario, A. [2 ]
Ventura, J. [2 ]
Dias, C. [2 ]
机构
[1] Univ Gabes, Fac Sci Gabes, Lab Phys Mat & Nanomat Appl Environm, Cite Erriadh Manara Zrig, Gabes 6072, Tunisia
[2] Univ Porto, Fac Ciencias, Dept Fis & Astron, IFIMUP, Rua Campo Alegre S-N, P-4169007 Porto, Portugal
关键词
In2S3; films; Spray pyrolysis; Cl doping; Physical properties; Ooptical constants; PL spectroscopy; ELECTRICAL-PROPERTIES; PHYSICAL-PROPERTIES; REFRACTIVE-INDEX; BETA-IN2S3; BEHAVIOR; DEPOSITION; STRENGTHS; GROWTH; LAYERS; CU;
D O I
10.1007/s12648-024-03305-1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Thin films of chlorine doped indium sulfide (In2S3:Cl) have been elaborated on glass substrates using chemical spray pyrolysis (CSP). Analysis by X-ray diffraction (XRD) and Raman spectroscopy confirm the formation of a cubic beta-In2S3 material without any secondary phases. The study by Atomic Force Microscopy (AFM) reveals that the surface roughness increases with the level of doping. In the visible and near infrared regions, transmission reaches 80%. The refractive index (n) is affected by the change in doping concentration. Using the Wemple-DiDomenico model some optical parameters such as: single oscillator energy (E-0), dispersion energy (E-d) and high frequency dielectric constant (epsilon(infinity)) were determined. Optical conductivities were also estimated. PL spectroscopy shows a high degree of reversibility with respect to temperature changes as well as it is observed that films present seven emissions related to In2S3 defects.
引用
收藏
页码:551 / 562
页数:12
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