Comparative analysis of heavy ions and alpha particles impact on gate-all-around TFETs and gate-all-around MOSFETs

被引：1
|
作者：
Kumar, Pankaj [1 ]
Koley, Kalyan [2 ]
Kumar, Subindu [3 ]
机构：
[1] Graphic Era Deemed Univ, Dept ECE, Dehra Dun 248002, India
[2] Birla Inst Technol, Dept ECE, Mesra 835215, India
[3] Indian Inst Technol, Dept Elect Engn, Dhanbad 826004, India
来源：
MICRO AND NANOSTRUCTURES | 2024年 / 192卷
关键词：
GAA TFET; GAA MOSFET; Heavy ions; Alpha particles; Bipolar gain; DEPLETED SOI TECHNOLOGIES; TUNNEL FET; SIMULATION; TRANSISTOR;
D O I：
10.1016/j.micrna.2024.207875
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The single-event-transient (SET) effect due to heavy ions and alpha particles irradiation on n-type gate-all-around tunnel field effect transistor (GAA TFET) and n-type gate-all-around MOSFET (GAA MOSFET) has been carried out. Due to differences in carrier injection mechanisms, the generated electron-hole pairs (EHPs) due to high-energy particles (HEPs) act differently on the device. In addition, the impact of HEPs (i.e., heavy ions and alpha particles) on several locations along the channel are analyzed followed by the analysis of different energies of heavy ions and alpha particles irradiation on the device. Further, the impact of varying striking angles of HEPs on the device is also analyzed to get a close match as practically exposed device characteristic. Finally, the bipolar gain of the device has been analyzed which shows GAA TFET device has more immunity toward heavy ions strike and weak immunity toward alpha particle strikes when compared to the GAA MOSFET counterpart.
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页数：10
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