An Analysis of an ASK Demodulator With Dual Self-Biased Separated Voltages for Implantable Applications

被引:0
|
作者
Karimi, Mohammad Javad [1 ]
Zhou, Yuxuan [1 ]
Dehollain, Catherine [1 ]
Schmid, Alexandre [1 ]
机构
[1] Swiss Fed Inst Technol Lausanne, Inst Elect & Micro Engn, CH-1015 Lausanne, Switzerland
基金
瑞士国家科学基金会;
关键词
Modulation; Demodulation; Amplitude shift keying; Robustness; Implants; Transistors; Topology; Amplitude shift keying (ASK); biomedical implants; data transmission; demodulator; modulation index;
D O I
10.1109/TCSII.2024.3357212
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new structure of low-power demodulator named "separated- V-b " amplitude shift keying (ASK) demodulator is proposed. The circuit is based on the switching behavior of the core digital shaper with different bias voltages, which improves its operation at low modulation indexes and reduces power consumption. This design does not require a comparator or Schmitt trigger, and only a few elements are needed which minimizes the chip area. The design is fabricated in the 0.18 mu m CMOS process. The core chip area is 0.00144 mm(2), and the power consumption is 45 mu W at a 1.8V power supply. The data rate can be nearly 2.7 Megabits per second (Mbps) at 13.56 MHz.
引用
收藏
页码:2986 / 2990
页数:5
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