Comparison of Electro-Optical Characteristics of Simulated and Fabricated InGaN/ GaN MQWs Green Light Emitting Diodes on c-Plane Sapphire

被引：1
|
作者：
Mazumder, Indrani [1 ,2 ]
Sapra, Kashish [1 ,2 ]
Aagiwal, Harshita [2 ]
Chauhan, Ashok [2 ]
Mathew, Manish [1 ,2 ]
Prajapati, Priyavarat [2 ]
Kushwaha, Bhoopendra Kumar [2 ]
Singh, Arvind Kumar [2 ]
Sharma, Ramakant [2 ]
Shankar, Bhawani [2 ]
Kothari, Prateek [2 ]
Singh, Kuldip [1 ,2 ]
机构：
[1] AcSIR Ghaziabad, Ghaziabad, Uttar Pradesh, India
[2] CSIR CEERI, Pilani, Rajasthan, India
来源：
8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024 | 2024年
关键词：
RIE; Contact fabrication; IQE; Emission Power;
D O I：
10.1109/EDTM58488.2024.10512115
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present the simulation and fabrication with characterization of InGaN MQWs based green LEDs on c-plane sapphire substrate in this paper. The simulated results show that internal quantum efficiency droop has improved from 13% in reference structure to 4% in the modified structure at 200 A/cm(2) current density with replacement of the 15 nm AlGaN step index EBL with a super-lattice pair of graded AlGaN EBL following a reduction in droop, polarization charges and increment in hole injection towards active region.
引用
收藏
页码：34 / 36
页数：3
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