Design of a High-Voltage Low-Ripple Converter With High-Frequency Dickson Multipliers

被引:1
|
作者
Ye, Zhechi [1 ]
Surakitbovorn, Kawin [1 ]
Lin, Calvin H. [1 ]
Rivas-Davila, Juan [1 ]
机构
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
关键词
gallium nitride (GaN) high-electron-mobility transistors (HEMTs); high voltage; planar transformer; ripple cancellation; voltage multiplier;
D O I
10.1109/TIE.2024.3413812
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
High-voltage, low-ripple dc-dc converters are essential in various industrial and scientific applications. Increased switching frequency helps improve converter power density but challenges circuit design. In this article, we propose a design method based on a detailed model of Dickson voltage multipliers to account for non-idealities in high-frequency multiplier circuitry. We present the design of a high-frequency 80 W, 48-V-to-7-kV dc-dc power converter with less than 10 Vpp voltage ripple. The circuit utilizes GaN-based high-frequency inverters, multiport air-core planar printed circuit board (PCB) transformers, Dickson voltage multipliers, and ripple cancellation. The PCB transformers are constructed with shielding layers to mitigate noise-induced voltage ripple. The implemented prototype can maintain a 0.1% ripple ratio while achieving 86% peak efficiency.
引用
收藏
页码:401 / 410
页数:10
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