High Power GaN Doubler with High Duty Cycle Pulse Based on Local Non-reflection Design

被引：0

作者：

Yazhou DONG ^{[1
]}

Tianchi ZHOU ^{[1
]}

Shixiong LIANG ^{[2
]}

Guodong GU ^{[2
]}

Hongji ZHOU ^{[1
]}

Jianghua YU ^{[1
]}

Hailong GUO ^{[1
]}

Yaxin ZHANG ^{[1
]}

机构：

[1] School of Electronic Science and Engineering, University of Electronic Science and Technology of China

[2] National Key Laboratory of Solid-State Microwave Devices and Circuits, Hebei Semiconductor Research

来源：

Chinese Journal of Electronics | 2024年 / 33卷 / 05期

关键词：

D O I：

暂无

中图分类号：

TN771 [倍频器];

学科分类号：

摘要：

The study focuses on the development of gallium nitride(GaN) Schottky barrier diode(SBD) frequency doublers for terahertz technology. The low conversion efficiency of these doublers limits their practical applications. To address this challenge, the paper proposes a multi-objective local no-reflection design method based on a three-dimensional electromagnetic structure. The method aims to improve the coupling efficiency of input power and reduce the reflection of power output. Experimental results indicate that the proposed method significantly improves the performance of GaN SBD frequency doublers, achieving an efficiency of 16.9% and a peak output power of 160mW at 175 GHz. These results suggest that the method can contribute to the further development of GaN SBD frequency doublers for terahertz technology.

引用

页码：1196 / 1203

页数：8

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