Electrical characterization of integrated passive devices using thin film technology for 3D integration

被引：0

作者：

Xin SUN ^{[1
]}

Yunhui ZHU ^{[1
]}

Zhenhua LIU ^{[1
]}

Qinghu CUI ^{[1
]}

Shenglin MA ^{[1
,2
]}

Jing CHEN ^{[1
]}

Min MIAO ^{[3
]}

Yufeng JIN ^{[1
]}

机构：

[1] National Key Laboratory of Science and Technology on Micro/Nano Fabrication,Peking University

[2] Department of Mechanical and Electrical Engineering,Xiamen University

[3] Information Microsystem Institute,Beijing Information Science and Technology

来源：

JournalofZhejiangUniversity-ScienceC(Computers&Electronics) | 2013年 / 14卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TN405 [制造工艺];

学科分类号：

摘要：

With the development of 3D integration technology,microsystems with vertical interconnects are attracting attention from researchers and industry applications.Basic elements of integrated passive devices(IPDs),including inductors,capacitors,and resistors,could dramatically save the footprint of the system,optimize the form factor,and improve the performance of radio frequency(RF) systems.In this paper,IPDs using thin film built-up technology are introduced,and the design and characterization of coplanar waveguides(CPWs),inductors,and capacitors are presented.

引用

页码：235 / 243

页数：9

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