Efficiency improvement of thin film CuIn1-xGaxSe2 structure for solar cells applications

被引：1

作者：

Benahmed, A. ^{[2
]}

Aissat, A. ^{[1
,2
]}

Ayachi, B. ^{[3
]}

Sfina, N. ^{[4
]}

Saidi, F. ^{[5
]}

Vilcot, J. P. ^{[3
]}

机构：

[1] Univ Ahmed Draia, Adrar, Algeria

[2] Univ Blida 1, Labortory LATSI, Ouled Yaich, Algeria

[3] Univ Lille, Inst Elect Microelect & Nanotechnol IEMN, CNRS, UMR 8520, Ave Poincare,CS 60069, F-60069 Villeneuve Dascq, France

[4] King Khalid Univ, Coll Sci & Arts Mahayel Asir, Dept Phys, Abha, Saudi Arabia

[5] Univ Monastir, Fac Sci, Lab Micro Optoelect & Nanostruct, Monastir, Tunisia

来源：

MICRO AND NANOSTRUCTURES | 2024年 / 188卷

关键词：

Materials; Thin Films; Solar Cells; Photovoltaic; Optoelectronic; GAP;

D O I：

10.1016/j.micrna.2024.207801

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, the CuInGaSe2 based solar cell optimization has been established. We have simulated the structural strain effect. The effect of gallium concentration on the optical properties and the quantum external efficiency EQE was investigated. We also optimized the concentration x at low defect densities. The optimal gallium concentration is 0.30. We obtained an efficiency of the CuIn0.70Ga0.30Se2 absorber solar cell around 24% with a strain epsilon = 0.64% and material defects densities equal to 1.2x1015cm � 3. This work has been validated by theoretical and experimental studies. This study allows us to find a compromise between concentration x and defect concentrations in order to improve the performance and high efficiency of the solar cell.

引用

页数：11

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