Growth of SiGe thin films with uniform and non-uniform Si concentration profiles on insulating substrates by high-speed continuous wave laser annealing

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作者：
Matsumura, Ryo [1 ]
Ishii, Satoshi [1 ,2 ]
Fukata, Naoki [1 ,2 ]
机构：
[1] International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki Tsukuba, Ibaraki,305-0044, Japan
[2] Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennnodai Tsukuba, Ibaraki,305-8573, Japan
来源：
Materials Science in Semiconductor Processing | 2021年 / 134卷
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