Epitaxial growth of Ca(Ge1-xSnx)2 with group IV 2D layers on Si substrate

被引：0
|
作者：
Yoshizaki, Takashi [1 ]
Terada, Tsukasa [1 ,2 ]
Uematsu, Yuto [1 ]
Ishibe, Takafumi [1 ]
Nakamura, Yoshiaki [1 ]
机构：
[1] Osaka Univ, 1-3 Machikaneyama Cho, Toyonaka, Osaka 5608531, Japan
[2] Tohoku Univ, 2-1-1 Katahira,Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS EXPRESS | 2024年 / 17卷 / 05期
基金：
日本学术振兴会;
关键词：
THERMOELECTRIC-POWER FACTOR; ANOMALOUS ENHANCEMENT; THERMAL-CONDUCTIVITY; CAGE2; FILMS; PERFORMANCE; SILICENE; REDUCTION; TRANSPORT;
D O I：
10.35848/1882-0786/ad3ee2
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Two-dimensional (2D) material is drawing considerable attention as a promising thermoelectric material. This study establishes the formation method of renewed Ca-intercalated group IV 2D materials, Ca(Ge1-xSnx)(2) crystals including germanene-based 2D layers. The solid phase epitaxy allows us to form epitaxial Ca(Ge1-xSnx)(2) on Si. Atomic force microscopy reveals that the Ca(Ge1-xSnx)(2) has island structures. X-ray diffraction proved the epitaxial growth of the Ca(Ge1-xSnx)(2) island structures and the increase of the c-axis lattice constant with Sn content increase. The formation of this renewed intermetallic compound including group IV 2D layer opens an avenue for high performance thermoelectric generator/Si.
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页数：4
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