High Performance Photomultiplication-type Organic Photodetectors Based on Small-molecule Semiconductor IEICO

被引：0

作者：

Wang J.-B. ^{[1
]}

Tang X.-S. ^{[2
]}

Zhou B. ^{[1
]}

Zeng X.-H. ^{[1
]}

Yu H.-L. ^{[1
]}

Zhou Y.-W. ^{[1
]}

机构：

[1] College of Physics & Electronics Information Engineering, Minjiang University, Fuzhou

[2] College of Optoelectronic Engineering, Chongqing University, Chongqing

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2021年 / 42卷 / 02期

关键词：

Interfacial layer; Photomultiplication-type organic photodetectors; Solution-processing; ZnO;

D O I：

10.37188/CJL.20200349

中图分类号：

学科分类号：

摘要：

The photomultiplication(PM)-type organic photodetectors(OPDs) with the structures of ITO/ZnO/P3HT: IEICO/Al and ITO/PEDOT: PSS/P3HT: IEICO/Al are fabricated by solution-processing method, respectively. In the active layers, the weight ratio of electron donor and acceptor is 100: 1. The OPDs based on a ZnO interfacial layer can work well both under forward and reverse bias voltages, while the OPDs based on a PEDOT: PSS interfacial layer can only work under reverse bias voltages. Under -15 V bias, compared with the PEDOT: PSS interfacial layer-based OPDs, the ZnO interlayer-based OPDs exhibit a more than 4 times smaller dark current density(2. 2 μA/cm2), a more than 3 times larger light current density(3. 7 mA/cm2) under 1.5 mW/cm2 light illumination, and more than 4 times larger average external quantum efficiency(3262%) and responsivity(13.3 A/W) with a more than 11 times larger average detectivity(1.6×1013 Jones). These results demonstrate that the ZnO interfacial layer can reduce the dark current density and increase the EQEs of PM-type OPDs significantly, all of which can greatly improve the optoelectronic performance of devices. © 2021, Science Press. All right reserved.

引用

页码：241 / 249

页数：8

共 20 条

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