Emission current enhancement from quasi-freestanding epitaxial graphene microstructure electron emitters through surface layered silicon dioxide

被引：0

作者：

Lewis, Daniel ^{[1
,2
]}

Swart, Jason ^{[3
]}

Pedowitz, Michael ^{[1
,2
]}

Demell, Jennifer ^{[4
]}

Jordan, Brendan ^{[1
,2
]}

Myers-Ward, Rachael L. ^{[5
]}

Pennachio, Daniel J. ^{[5
]}

Hajzus, Jenifer R. ^{[5
]}

Daniels, Kevin M. ^{[1
,2
]}

机构：

[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA

[2] Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA

[3] Arizona State Univ, Sch Math & Stat Sci, Tempe, AZ 85281 USA

[4] Lab Phys Sci, College Pk, MD 20740 USA

[5] US Naval Res Lab, Washington, DC 23075 USA

来源：

2D MATERIALS | 2024年 / 11卷 / 03期

关键词：

quasi-freestanding; phonon assisted; electron emission; bilayer graphene; epitaxial graphene; microstructures; secondary electron emission;

D O I：

10.1088/2053-1583/ad3ce9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Enhanced electron emission from oxide-encapsulated quasi-freestanding bilayer epitaxial graphene devices is reported, including one emission current of 9.4 mu A and successful emission even with oxide thicknesses of up to 1.25 mu m. The low operating temperature (215 degrees C), and applied electric fields under which the devices operate indicate electron emission is due to phonon-assisted electron emission, wherein forward-scattering hot phonons impart the necessary energy for the electrons to escape the graphene as an emission current. A suite of device structures and behaviors are cataloged, and various emission behaviors are demonstrated through encapsulating oxide layers. Emission current enhancement due to electron multiplication in the oxide layers is observed across multiple devices and oxide thicknesses.

引用

页数：14

共 9 条

[1] Phonon assisted electron emission from quasi-freestanding bilayer epitaxial graphene microstructures
Lewis, Daniel
Jordan, Brendan
Pedowitz, Michael
Pennachio, Daniel J.
Hajzus, Jenifer R.
Myers-Ward, Rachael
Daniels, Kevin M.
NANOTECHNOLOGY, 2022, 33 (37)
[2] Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate
Wehrfritz, Peter
Fromm, Felix
Malzer, Stefan
Seyller, Thomas
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (30)
[3] Approaching the Intrinsic Electron Field-Emission of a Graphene Film Consisting of Quasi-Freestanding Graphene Strips
Huang, Qingsong
Wang, Gang
Guo, Liwei
Jia, Yuping
Lin, Jingjing
Li, Kang
Wang, Wenjun
Chen, Xiaolong
SMALL, 2011, 7 (04) : 450 - 454
[4] Advancing quasi-freestanding epitaxial graphene electronics through integration of wafer scale hexagonal boron nitride dielectrics
Bresnehan, Michael S.
Hollander, Matthew J.
Marucci, Rebecca L.
LaBella, Michael
Trumbull, Kathleen A.
Cavalero, Randal
Snyder, David W.
Robinson, Joshua A.
CARBON NANOTUBES, GRAPHENE, AND ASSOCIATED DEVICES V, 2012, 8462
[5] Green growth of mixed valence manganese oxides on quasi-freestanding bilayer epitaxial graphene-silicon carbide substrates
Pedowitz, Michael
Lewis, Daniel
Demell, Jennifer
Pennachio, Daniel J.
Hajzus, Jenifer R.
-Ward, Rachael Myers
Kim, Soaram
Daniels, Kevin M.
MATERIALS TODAY ADVANCES, 2024, 21
[6] HOT ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE BY SURFACE AVALANCHE
POIRIER, R
OLIVIER, J
APPLIED PHYSICS LETTERS, 1969, 15 (11) : 364 - &
[7] QUASI-RESONANT ELECTRON EXCHANGE IN THE EMISSION OF SECONDARY IONS FROM THE SURFACE OF SILICON
ABRAMENKO, VA
LEDYANKIN, DV
URAZGILDIN, IF
YURASOVA, VE
JETP LETTERS, 1986, 44 (08) : 512 - 515
[8] Characteristics of secondary electron emission from few layer graphene on silicon (111) surface
Feng, Guo-Bao
Li, Yun
Li, Xiao-Jun
Xie, Gui-Bai
Liu, Lu
CHINESE PHYSICS B, 2022, 31 (10)
[9] Characteristics of secondary electron emission from few layer graphene on silicon(111) surface
封国宝
李韵
李小军
谢贵柏
刘璐
Chinese Physics B, 2022, 31 (10) : 632 - 645

← 1 →