Recent advances of interface engineering in inverted perovskite solar cells

被引:0
|
作者
余诗琪 [1 ,2 ]
熊壮 [1 ,2 ]
王振涵 [1 ,2 ]
周海涛 [1 ,2 ]
马飞 [1 ,2 ]
瞿子涵 [1 ,2 ]
赵洋 [1 ,2 ]
楚新波 [1 ,2 ]
游经碧 [1 ,2 ]
机构
[1] Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences
[2] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
基金
中国国家自然科学基金;
关键词
D O I
暂无
中图分类号
TM914.4 [太阳能电池];
学科分类号
080502 ;
摘要
Perovskite solar cells(PSCs) have witnessed great achievement in the past decade. Most of previous researches focus on the n–i–p structure of PSCs with ultra-high efficiency. While the n–i–p devices usually used the unstable charge transport layers, such as the hygroscopic doped spiro-OMe TAD, which affect the long-term stability. The inverted device with the p–i–n structure owns better stability when using stable undoped organic molecular or metal oxide materials. There are significant progresses in inverted PSCs, most of them related to charge transport or interface engineering. In this review, we will mainly summarize the inverted PSCs progresses related to the interface engineering. After that, we prospect the future direction on inverted PSCs.
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页码:68 / 80
页数:13
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