A 4H-SiC semi-super-junction shielded trench MOSFET:p-pillar is grounded to optimize the electric field characteristics

A 4 H-SiC trench gate metal-oxide-semiconductor field-effect transistor（UMOSFET） with semi-super-junction shielded structure（SS-UMOS） is proposed and compared with conventional trench MOSFET（CT-UMOS） in this work.The advantage of the proposed structure is given by comprehensive study of the mechanism of the local semi-super-junction structure at the bottom of the trench MOSFET.In particular,the influence of the bias condition of the p-pillar at the bottom of the trench on the static and dynamic performances of the device is compared and revealed.The on-resistance of SS-UMOS with grounded（G） and ungrounded（NG） p-pillar is reduced by 52%（G） and 71%（NG） compared to CT-UMOS,respectively.Additionally,gate oxide in the GSS-UMOS is fully protected by the p-shield layer as well as semi-super-junction structure under the trench and pbase regions.Thus,a reduced electric-field of 2 MV/cm can be achieved at the corner of the p-shield layer.However,the quasiintrinsic protective layer cannot be formed in NGSS-UMOS due to the charge storage effect in the floating p-pillar,resulting in a large electric field of 2.7 MV/cm at the gate oxide layer.Moreover,the total switching loss of GSS-UMOS is 1.95 mJ/cm2 and is reduced by 18% compared with CT-UMOS.On the contrary,the NGSS-UMOS has the slowest overall switching speed due to the weakened shielding effect of the p-pillar and the largest gate-to-drain capacitance among the three.The proposed GSSUMOS plays an important role in high-voltage and high-frequency applications,and will provide a valuable idea for device design and circuit applications.