THICKNESS-FIELD EXCITED THICKNESS-SHEAR RESONATORS IN (110)GAAS

被引：8
|
作者：
HJORT, K
SCHWEEGER, G
DEHE, A
FRICKE, K
HARTNAGEL, HL
机构：
[1] Institut für Hochfrequenztechnik, TH Darmstadt, 64283 Darmstadt
[2] School of Engineering, Uppsala University
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 03期
关键词：
D O I：
10.1063/1.113533
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors present experimental evidence for thickness-field excitation of thickness-shear vibrations in GaAs as an example material for zincblende-crystal semiconductors. The resonance frequency is shown to agree perfectly with theory. This gives an alternative to the composite resonators in miniaturized local oscillators for, e.g., monolithic microwave integrated circuit applications. © 1995 American Institute of Physics.
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页码：326 / 328
页数：3
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