FABRICATION COMPATIBILITY OF INTEGRATED SILICON SMART PHYSICAL SENSORS

被引:0
|
作者
WOLFFENBUTTEL, RF
机构
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Integrated silicon smart sensors are complete data-acquisition systems on a single silicon chip. The celebrated material compatibility of silicon sensors with microelectronic circuits in silicon is a necessary but insufficient prerequisite for such an integration. The essential issue is rather the fabrication compatibility of the sensor, sensor-related analog microelectronic circuits and digital interface circuits. Fabrication compatibility includes merging of sensor processing with analog and digital microelectronic circuit processing, both on the wafer level, in terms of doping profile, thermal budget and equipment utilization, and on the die level, with respect to testing, dicing, bonding and packaging. The incentives, opportunities and problems in merging sensor processes with a typical standard bipolar process are discussed. In some applications the structures to be merged are fundamentally fabrication incompatible. Special post-processing steps are available that either extend the capabilities of the bipolar process, such as selective epitaxial growth and epitaxial lateral overgrowth, or allow the fabrication-compatibility problem to be postponed until the bonding phase, such as wafer-to-wafer bonding and flip-chip bonding. Finally, the economics of integrated silicon smart sensors are investigated. The shortcomings of the conventional approach adopted from the microelectronics industry and aiming solely at die-area minimization, whenever possible for the sake of yield in mass production, are identified in view of fabrication compatibility, production volume and costs of testing and packaging. Moreover, the discrepancy between the prime motivation for fabricating integrated silicon smart sensors, namely enhancing the level of abstraction of the complete data-acquisition unit and its realization on the smallest possible material carrier, the chip, in order to improve user friendliness and maintainability in an effort to gain market acceptance, versus the limitation of functional complexity imposed by die-area economics is discussed.
引用
收藏
页码:11 / 28
页数:18
相关论文
共 50 条
  • [1] A SILICON SILICON-NITRIDE MEMBRANE FABRICATION PROCESS FOR SMART THERMAL SENSORS
    SARRO, PM
    VANHERWAARDEN, AW
    VANDERVLIST, W
    SENSORS AND ACTUATORS A-PHYSICAL, 1994, 42 (1-3) : 666 - 671
  • [2] Assessment of silicon wafer material for the fabrication of integrated circuit sensors
    Müller, T
    Kissinger, G
    Benkitsch, AC
    Brand, O
    Baltes, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (04) : 1604 - 1611
  • [3] An industrial CMOS process family adapted for the fabrication of smart silicon sensors
    Müller, T
    Brandl, M
    Brand, O
    Baltes, H
    SENSORS AND ACTUATORS A-PHYSICAL, 2000, 84 (1-2) : 126 - 133
  • [4] Smart devices: Sensors, security and compatibility
    Electronic Products, 2023, 65 (02):
  • [5] INTEGRATED SMART SENSORS
    HUIJSING, JH
    SENSORS AND ACTUATORS A-PHYSICAL, 1992, 30 (1-2) : 167 - 174
  • [6] Integrated nanoscale silicon sensors using top-down fabrication
    Elibol, OH
    Morisette, D
    Akin, D
    Denton, JP
    Bashir, R
    APPLIED PHYSICS LETTERS, 2003, 83 (22) : 4613 - 4615
  • [7] Silicon membranes for smart silicon sensors
    Kal, S
    Das, S
    Lahiri, SK
    DEFENCE SCIENCE JOURNAL, 1998, 48 (04) : 423 - 431
  • [8] THE MODELING OF PHYSICAL PROCESSES IN SILICON INTEGRATED-CIRCUIT FABRICATION
    GODFREY, DJ
    GEC JOURNAL OF RESEARCH, 1987, 5 (03): : 156 - 160
  • [9] MODELING PHYSICAL PROCESSES IN SILICON INTEGRATED-CIRCUIT FABRICATION
    GODFREY, DJ
    PHYSICS IN TECHNOLOGY, 1986, 17 (06): : 260 - &
  • [10] Fabrication of silicon microchannel with integrated heater and temperature sensors for flow boiling studies
    Gedupudi, S.
    Cummins, G. P.
    Lin, H.
    Walton, A. J.
    Sefiane, K.
    Karayiannis, T. G.
    Kenning, D. B. R.
    PROCEEDINGS OF THE MICRO/NANOSCALE HEAT TRANSFER INTERNATIONAL CONFERENCE 2008, PTS A AND B, 2008, : 747 - 753