ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .3. INVESTIGATION OF EXCITED STATES BY APPLICATION OF UNIAXIAL STRESS AND THEIR IMPORTANCE IN RELAXATION PROCESSES

被引：277
作者：
WILSON, DK
FEHER, G
机构：
来源：
PHYSICAL REVIEW | 1961年 / 124卷 / 04期
关键词：
D O I：
10.1103/PhysRev.124.1068
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1068 / &
相关论文
共 35 条
[1]  
ABRAGAM A, 1956, CR HEBD ACAD SCI, V243, P576
[2]   Measurement of nuclear spin [J].
Breit, G ;
Rabi, II .
PHYSICAL REVIEW, 1931, 38 (11) :2082-2083
[3]   EXPERIMENTAL STUDY OF SPIN-LATTICE RELAXATION TIMES IN ARSENIC-DOPED SILICON [J].
CULVAHOUSE, JW ;
PIPKIN, FM .
PHYSICAL REVIEW, 1958, 109 (02) :319-327
[4]   SENSITIVITY CONSIDERATIONS IN MICROWAVE PARAMAGNETIC RESONANCE ABSORPTION TECHNIQUES [J].
FEHER, G .
BELL SYSTEM TECHNICAL JOURNAL, 1957, 36 (02) :449-484
[5]   ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .2. ELECTRON SPIN RELAXATION EFFECTS [J].
FEHER, G ;
GERE, EA .
PHYSICAL REVIEW, 1959, 114 (05) :1245-1256
[6]   ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J].
FEHER, G .
PHYSICAL REVIEW, 1959, 114 (05) :1219-1244
[7]  
FEHER G, 1960, BULL AM PHYS SOC, V5, P264
[8]  
FEHER G, 1961, 1960 P INT C SEM PHY, P579
[9]   HYPERFINE SPLITTING IN SPIN RESONANCE OF GROUP-V DONORS IN SILICON [J].
FLETCHER, RC ;
YAGER, WA ;
PEARSON, GL ;
MERRITT, FR .
PHYSICAL REVIEW, 1954, 95 (03) :844-845
[10]  
HANNAY NB, 1959, SEMICONDUCTORS AMERI, P460
1234