共 50 条
- [1] ANISOTROPY OF REFRACTIVE-INDEX IN STRONG ELECTRIC-FIELDS AND ELECTRON-SCATTERING IN N-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (05): : 624 - 627
- [2] ELECTRON-SCATTERING MECHANISMS IN N-TYPE INDIUM SELENIDE PHYSICAL REVIEW B, 1984, 29 (10): : 5708 - 5717
- [3] ON PECULIARITIES FOR DETERMINING THE ANISOTROPY PARAMETER OF ELECTRON-SCATTERING IN N-SI UKRAINSKII FIZICHESKII ZHURNAL, 1990, 35 (02): : 265 - 267
- [4] INTRABAND ANISOTROPY OF CARRIER SCATTERING IN PLASTICALLY DEFORMED N-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (12): : 1387 - 1388
- [5] INFLUENCE OF ELECTRON-ELECTRON SCATTERING ON HALL-EFFECT IN N-TYPE GE AND N-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 528 - 529
- [7] CALCULATION OF ANISOTROPY PARAMETER FOR N-TYPE SI SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (11): : 2785 - &
- [8] SCATTERING ANISOTROPY OF CARRIERS IN N-TYPE SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 798 - 800
- [9] THEORY OF FREE-CARRIER ABSORPTION IN N-TYPE LEAD CHALCOGENIDES DUE TO ELECTRON ELECTRON-SCATTERING PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1983, 118 (01): : 135 - 146
- [10] ANISOTROPY OF HALL-COEFFICIENT OF N-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1086 - 1087