Experiment on Ka-band amplifiers degraded and damaged by electromagnetic waves

被引：1
|
作者：
Wang, Zhan-Liang [1 ,2 ]
Luo, Jinjin [1 ]
Xiong, Xu [2 ]
Gong, Yu-Bin [1 ]
Wei, Yan-Yu [1 ]
Duan, Zhao-Yun [1 ]
Gong, Huarong [1 ]
机构：
[1] UESTC, Sch Elect Sci & Engn, 4,Sect 2,North Jianshe Rd, Chengdu, Sichuan, Peoples R China
[2] State Key Lab Complex Electromagnet Environm Effe, Luoyang 471003, Peoples R China
来源：
JOURNAL OF ENGINEERING-JOE | 2018年 / 14期
基金：
中国国家自然科学基金;
关键词：
electromagnetic waves; microwave amplifiers; Ka-band amplifiers; high-power microwave; continuous wave; HMMC5040; chip; uncharged amplifiers; charged amplifiers; injected power level; pulse wave; anti-radiation design;
D O I：
10.1049/joe.2018.0098
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Research on amplifiers injected by high-power microwave is important and lays foundation for reinforce technology. This study reports an experiment on Ka-band amplifiers injected and damaged by electromagnetic waves. The continuous wave and the pulse wave are injected into the amplifiers which are based on HMMC5040 chips. The injected power level increases until the amplifiers are damaged. The results are recorded and analysed. The results show that: (i) the uncharged amplifiers need more injected power to be damaged compared with the charged amplifiers. (ii) To degrade or damage the amplifiers, the pulse wave need more power. (iii) The first node of the HMMC5040 chip is damaged in the experiment, so this is the key part for anti-radiation design.
引用
收藏
页码：704 / 708
页数：5
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