ELECTRON-TRANSPORT DYNAMICS IN QUANTIZED INTRINSIC GAAS

被引：22

|

作者：

LEVI, AFJ

SPAH, RJ

ENGLISH, JH

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.36.9402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：9402 / 9405

页数：4

相关论文

共 50 条

[1] DYNAMICS OF EXTREME NONEQUILIBRIUM ELECTRON-TRANSPORT IN GAAS
HAYES, JR
LEVI, AFJ
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1744 - 1752
[2] BALLISTIC ELECTRON-TRANSPORT SEEN IN GAAS
ROBINSON, AL
SCIENCE, 1986, 231 (4733) : 22 - 24
[3] BALLISTIC ELECTRON-TRANSPORT THROUGH A NARROW CHANNEL IS QUANTIZED
KHURANA, A
PHYSICS TODAY, 1988, 41 (11) : 21 - 23
[4] THEORY OF BALLISTIC ELECTRON-TRANSPORT THROUGH QUANTIZED CONSTRICTIONS
HE, S
DASSARMA, S
SOLID-STATE ELECTRONICS, 1989, 32 (12) : 1695 - 1699
[5] SIMPLE ANALYTICAL MODEL FOR ELECTRON-TRANSPORT IN GAAS
WANG, YC
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 53 (02): : K113 - K117
[6] WARM ELECTRON-TRANSPORT IN GAAS QUANTUM WELLS
CHATTOPADHYAY, D
KABASI, A
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1989, 154 (01): : 281 - 286
[7] ELECTRON-TRANSPORT THROUGH GAALAS BARRIERS IN GAAS
FENG, SL
KRYNICKI, J
ZAZOUI, M
BOURGOIN, JC
BOIS, P
ROSENCHER, E
JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) : 341 - 345
[8] LOW-TEMPERATURE ELECTRON-TRANSPORT IN GAAS
MEYER, JR
BARTOLI, FJ
SOLID STATE COMMUNICATIONS, 1982, 41 (01) : 19 - 22
[9] QUANTIZED ELECTRON-TRANSPORT IN AMORPHOUS-SILICON MEMORY STRUCTURES
HAJTO, J
OWEN, AE
GAGE, SM
SNELL, AJ
LECOMBER, PG
ROSE, MJ
PHYSICAL REVIEW LETTERS, 1991, 66 (14) : 1918 - 1921
[10] HIGH-FIELD ELECTRON-TRANSPORT IN COMPENSATED GAAS
WU, EY
YU, BH
APPLIED PHYSICS LETTERS, 1991, 58 (14) : 1503 - 1505

← 1 2 3 4 5 →