共 50 条
- [2] INVESTIGATION OF THE INFLUENCE OF THE CONDITIONS DURING ION-IMPLANTATION AND ANNEALING OF SILICON-CARBIDE ON THE CRYSTAL-STRUCTURE AND RESISTANCE OF P-TYPE LAYERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (06): : 684 - 685
- [5] VACANCIES AND DIVACANCIES IN CUBIC SILICON-CARBIDE JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (14): : 2501 - 2509
- [6] EDGE PHOTOLUMINESCENCE OF CUBIC SILICON-CARBIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (11): : 1256 - 1257
- [7] MAGNETORESISTANCE IN SILICON-CARBIDE OF CUBIC MODIFICATION IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1977, (05): : 90 - 94
- [8] POLYTYPISM OF EPITAXIAL LAYERS OF SILICON-CARBIDE KRISTALLOGRAFIYA, 1976, 21 (06): : 1222 - 1223
- [9] THE STRUCTURE AND COMPOSITION INVESTIGATION OF THICK LAYERS OF SILICON-CARBIDE DEPOSITED FROM GAS-PHASE IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 1995, 59 (02): : 35 - 37