GaAs-Cs: A NEW TYPE OF PHOTOEMITTER

被引：226
|
作者：
Scheer, J. J. [1 ]
van Laar, J. [1 ]
机构：
[1] NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands
来源：
SOLID STATE COMMUNICATIONS | 1965年 / 3卷 / 08期
关键词：
D O I：
10.1016/0038-1098(65)90289-9
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
From elementary considerations it Is concluded that the system p-type GaAs-Cs should have very good properties as a photoemitter. This was verified by experiments on vacuum cleaved single crystals. After covering with cesium a maximum overall sensitivity of 500 mu A/Lumen and a long wavelength threshold of 9000 A were measured.
引用
收藏
页码：189 / 193
页数：5
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