TEMPERATURE-DEPENDENCE OF THE 1/F NOISE IN P-TYPE INSB

被引：0
|
作者：
ALEKPEROV, SA
ALIEV, FL
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：578 / 579
页数：2
相关论文
共 50 条
  • [1] TEMPERATURE-DEPENDENCE OF THE 1/F NOISE IN INSB
    ALEKPEROV, SA
    GUSEINOV, NY
    KADZHAR, CO
    SALAEV, EY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (08): : 973 - 974
  • [2] TEMPERATURE DEPENDENCE OF THERMOELECTRIC POWER OF P-TYPE INSB
    BOLSHAKOV, LP
    NASLEDOV, DN
    FILIPCHE.AS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (06): : 912 - +
  • [3] TEMPERATURE-DEPENDENCE OF 1/F NOISE
    EBERHARD, JW
    DUTTA, P
    HORN, PM
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 299 - 299
  • [4] TEMPERATURE DEPENDENCE OF SURFACE RECOMBINATION VELOCITY IN P-TYPE INSB
    GALAVANO.VV
    SHEVCHUK, OS
    OBUKHOV, SA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (09): : 1612 - &
  • [5] TEMPERATURE-DEPENDENCE OF REFLECTIVITY OF P-TYPE PB1-XSNXTE
    RAMAGE, JC
    TIDEY, RJ
    STRADLING, RA
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (15) : 1918 - 1922
  • [6] TEMPERATURE-DEPENDENCE OF 1/F NOISE IN METALS
    YU, MK
    LIU, FS
    BAO, YN
    PHYSICAL REVIEW B, 1985, 32 (10) : 6394 - 6398
  • [7] TEMPERATURE-DEPENDENCE OF 1/F NOISE IN SILICON
    LUO, J
    LOVE, WF
    MILLER, SC
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3196 - 3198
  • [8] TEMPERATURE DEPENDENCE OF SURFACE RECOMBINATION VELOCITY IN p-TYPE InSb.
    Galavanov, V.V.
    Obukhov, S.A.
    Shevchuk, O.S.
    1612, (05):
  • [9] TEMPERATURE DEPENDENCE OF FUNDAMENTAL ABSORPTION IN LIGHTLY DOPED P-TYPE INSB
    VALYASHKO, EG
    GERRMANN, K
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (09): : 1086 - +
  • [10] TEMPERATURE-DEPENDENCE OF 1/F NOISE IN EPITAXIAL N-TYPE GAAS
    REN, L
    HOOGE, FN
    PHYSICA B, 1992, 176 (03): : 209 - 212
12345