SUBSTITUTIONAL DONORS AND CORE EXCITONS IN MANY-VALLEY SEMICONDUCTORS

被引：35

作者：

ALTARELLI, M

机构：

来源：

PHYSICAL REVIEW LETTERS | 1981年 / 46卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.46.205

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：205 / 208

页数：4

共 14 条

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[10] SHALLOW-DEEP INSTABILITIES OF DONOR IMPURITY LEVELS AND EXCITONS IN MANY-VALLEY SEMICONDUCTORS [J].

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