ANOMALOUS MU+ PRECESSION IN SILICON

被引：128

作者：

BREWER, JH

CROWE, KM

GYGAX, FN

JOHNSON, RF

PATTERSON, BD

FLEMING, DG

SCHENCK, A

机构：

[1] UNIV CALIF, LAWRENCE BERKELEY LAB, BERKELEY, CA 94720 USA

[2] UNIV BRITISH COLUMBIA, VANCOUVER, BRITISH COLUMBI, CANADA

[3] ETH, INST HOCHENERGIEPHYS, ZURICH, SWITZERLAND

[4] SCHWEIZERISCHES INST NUKL FORSCH, VILLIGEN, SWITZERLAND

来源：

PHYSICAL REVIEW LETTERS | 1973年 / 31卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.31.143

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：143 / 146

页数：4

共 15 条

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SACHS, AM .

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[3] PRECISION MEASUREMENT OF HYPERFINE INTERVAL OF MUONIUM BY A NOVEL TECHNIQUE - RAMSEY RESONANCE IN ZERO FIELD [J].

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SWANSON, RA .

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[4] MUONIUM FORMATION IN SEMICONDUCTORS [J].

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PREPOST, R ;

SACHS, AM .

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[5]

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[6]

GUREVICH II, 1971, SOV PHYS JETP-USSR, V33, P253

[7] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J].

HAYNES, JR .

PHYSICAL REVIEW LETTERS, 1960, 4 (07) :361-363

[8] MUONIUM [J].

HUGHES, VW .

ANNUAL REVIEW OF NUCLEAR SCIENCE, 1966, 16 :445-&

[9]

LANCASTER G, 1967, ELECTRON SPIN RESONA

[10]

Samoilov V. M., 1970, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V58, P2202

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