MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTURE

被引：65
作者：
FROHMANB.D
机构：
来源：
APPLIED PHYSICS LETTERS | 1971年 / 18卷 / 08期
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D O I：
10.1063/1.1653685
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：332 / &
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