共 50 条
- [1] PULSED LASER ATOM PROBE CHARACTERIZATION OF SILICON-CARBIDE JOURNAL DE PHYSIQUE, 1989, 50 (C8): : C8459 - C8464
- [3] PULSED ELECTRON-BEAMS FOR ANNEALING OF ION-IMPLANTED SILICON BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (08): : 1031 - 1032
- [4] INFLUENCE OF PULSED LASER IRRADIATION ON THE PROPERTIES OF IMPLANTED LAYERS OF SILICON-CARBIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (05): : 596 - 597
- [5] MELTING AND DAMAGE PRODUCTION IN SILICON-CARBIDE UNDER PULSED LASER IRRADIATION PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 121 (02): : 399 - 406
- [7] KINETICS OF SILICON-CARBIDE FORMATION ZHURNAL VSESOYUZNOGO KHIMICHESKOGO OBSHCHESTVA IMENI D I MENDELEEVA, 1980, 25 (01): : 118 - 119
- [8] MAGNETIC ANALYZER FOR PULSED ELECTRON-BEAMS REVUE ROUMAINE DE PHYSIQUE, 1983, 28 (07): : 601 - 605
- [10] GENERATION OF PICOSECOND PULSED ELECTRON-BEAMS ELECTRONICS & COMMUNICATIONS IN JAPAN, 1973, 56 (02): : 86 - 92