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- [2] INFLUENCE OF PHONON DRAG ON TRANSVERSE NERNST-ETTINGSHAUSEN EFFECT IN N-TYPE SIC(6H) SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07): : 889 - 890
- [3] THE NERNST-ETTINGSHAUSEN EFFECT IN N-TYPE INSB SOVIET PHYSICS-SOLID STATE, 1961, 3 (03): : 598 - 599
- [4] NERNST-ETTINGSHAUSEN COEFFICIENT IN N-TYPE SILICON JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (01): : 157 - 161
- [5] LONGITUDINAL AND TRANSVERSE NERNST-ETTINGSHAUSEN EFFECTS IN N-TYPE SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (12): : 1538 - +
- [6] NERNST-ETTINGSHAUSEN EFFECT IN STRONGLY DOPED N-TYPE GE SOVIET PHYSICS-SOLID STATE, 1964, 5 (10): : 2231 - 2233
- [7] QUANTUM OSCILLATIONS OF NERNST-ETTINGSHAUSEN EFFECT IN N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (03): : 365 - +
- [8] MAGNETOPHONON OSCILLATIONS OF NERNST-ETTINGSHAUSEN EFFECT IN N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (01): : 96 - &
- [9] THERMOELECTRIC POWER AND NERNST-ETTINGSHAUSEN THERMOMAGNETIC EFFECT IN N-TYPE INP SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (03): : 415 - &
- [10] NERNST-ETTINGSHAUSEN EFFECT IN DOPED N-TYPE INDIUM ANTIMONIDE CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 175 - &