LOW-TEMPERATURE PHOTOLUMINESCENCE STUDIES OF CHEMICAL-VAPOR-DEPOSITION-GROWN 3C-SIC ON SI

被引：142
|
作者：
CHOYKE, WJ
FENG, ZC
POWELL, JA
机构：
[1] WESTINGHOUSE ELECT CORP, CTR RES & DEV, PITTSBURGH, PA 15235 USA
[2] NASA, LEWIS RES CTR, CLEVELAND, OH 44135 USA
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 06期
关键词：
D O I：
10.1063/1.341532
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3163 / 3175
页数：13
相关论文
共 50 条
  • [1] Low temperature chemical vapor deposition of 3C-SiC on Si substrates
    Förster, C
    Cimalla, V
    Ambacher, O
    Pezoldt, J
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 201 - 204
  • [2] Anomalous photoluminescence from 3C-SiC grown on Si(111) by rapid thermal chemical vapor deposition
    Shim, HW
    Kim, KC
    Seo, YH
    Nahm, KS
    Suh, EK
    Lee, HJ
    APPLIED PHYSICS LETTERS, 1997, 70 (13) : 1757 - 1759
  • [3] High temperature ohmic contacts to 3C-SiC grown on Si substrates by chemical vapor deposition
    Constantinidis, G
    Kornilios, N
    Zekentes, K
    Stoemenos, J
    diCioccio, L
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 176 - 179
  • [4] Effects of Growth Conditions on the Low Temperature Photoluminescence Spectra of (111) 3C-SiC Layers Grown by Chemical Vapor Deposition on 3C-SiC Seeds grown by the Vapor-Liquid-Solid Technique
    Zoulis, G.
    Sun, J. W.
    Jegenyes, N.
    Lorenzzi, J. C.
    Juillaguet, S.
    Souliere, V.
    Ferro, G.
    Camassel, J.
    2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, 2010, 1292 : 119 - +
  • [5] Infrared reflectance study of 3C-SiC grown on Si by chemical vapor deposition
    Feng, Z. C.
    Huang, C. W.
    Chang, W. Y.
    Zhao, J.
    Tin, C. C.
    Lu, W.
    Collins, W. E.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 695 - 698
  • [6] LOW-TEMPERATURE GROWTH OF 3C-SIC ON SI SUBSTRATE BY CHEMICAL VAPOR-DEPOSITION USING HEXAMETHYLDISILANE AS A SOURCE MATERIAL
    TAKAHASHI, K
    NISHINO, S
    SARAIE, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (12) : 3565 - 3571
  • [7] PHOTOLUMINESCENCE SPECTROSCOPY OF ION-IMPLANTED 3C-SIC GROWN BY CHEMICAL VAPOR-DEPOSITION
    FREITAS, JA
    BISHOP, SG
    EDMOND, JA
    RYU, J
    DAVIS, RF
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 2011 - 2016
  • [8] Curvature evaluation of Si/3C-SiC/Si hetero-structure grown by Chemical Vapor Deposition
    Anzalone, R.
    Camarda, M.
    Severino, A.
    Piluso, N.
    La Via, F.
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 255 - +
  • [9] Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition
    Khazaka, Rami
    Portail, Marc
    Vennegues, Philippe
    Alquier, Daniel
    Michaud, Jean Francois
    ACTA MATERIALIA, 2015, 98 : 336 - 342
  • [10] Structural analysis of (211) 3C-SiC on (211) Si substrates grown by chemical vapor deposition
    Nishiguchi, T
    Mukai, Y
    Nakamura, M
    Nishio, K
    Isshiki, T
    Ohshima, S
    Nishino, S
    SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 285 - 288
12345