THIN-FILMS OF (RE)BA2CU3O7 EPITAXIALLY GROWN INSITU BY EXCIMER LASER ABLATION - STRUCTURAL AND SUPERCONDUCTING BEHAVIOR

被引：18

作者：

GUILLOUXVIRY, M ^{[1
]}

THIVET, C ^{[1
]}

KARKUT, MG ^{[1
]}

PADIOU, J ^{[1
]}

PENA, O ^{[1
]}

PERRIN, A ^{[1
]}

SERGENT, M ^{[1
]}

GAUNEAU, M ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN LANNION B,F-22301 LANNION,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 18卷 / 02期

关键词：

D O I：

10.1016/0921-5107(93)90122-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the epitaxial growth of (RE)Ba2Cu3O7 thin films, with RE = Y, Pr, Eu, Gd, Ho, presenting good superconducting properties, except for Pr which is a semiconductor. The film deposition was carried out through a fully in-situ process, using a laser ablation technique. To give access to future applications, especially for microwave devices, the growth control, first adjusted on small samples (typically 5 mm x 5 mm), has been extended to larger substrates up to 15 mm x 15 mm; these films also exhibit highly homogeneous characteristics.

引用

页码：115 / 121

页数：7

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