TEMPERATURE-DEPENDENCE OF THE SHALLOW-DONOR BOUND-EXCITON-EMISSION LINEWIDTH IN HIGH-PURITY INP

被引：7
|
作者：
BENZAQUEN, R
LEONELLI, R
ROTH, AP
机构：
[1] UNIV MONTREAL,RECH PHYS & TECHNOL & COUCHES MINCES GRP,MONTREAL,PQ H3C 3J7,CANADA
[2] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA,ON K1A 0R6,CANADA
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.52.1485
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Temperature-dependent photoluminescence measurements have been performed to study the linewidth of the ground and first excited states of the neutral shallow-donor bound-exciton transition in a high-purity n-type InP epilayer. For temperatures below 20 K, a theoretical model developed by Chou and Neumark to take into account the electron-hole correlation and the usual electron-phonon coupling is found to be in acceptable agreement with the linewidth data which follows a linear dependence upon temperature.
引用
收藏
页码：1485 / 1488
页数：4
相关论文
共 28 条
  • [1] TEMPERATURE-DEPENDENCE OF THE FREE-EXCITON-EMISSION LINEWIDTH IN HIGH-PURITY INP
    BENZAQUEN, R
    LEONELLI, R
    CHARBONNEAU, S
    POOLE, PJ
    ROTH, AP
    PHYSICAL REVIEW B, 1995, 52 (04) : R2273 - R2276
  • [2] Photoluminescence transient-decay study of the deep-donor bound-exciton-emission band in high-purity InP
    Benzaquen, R
    Charbonneau, S
    Leonelli, R
    Roth, AP
    PHYSICAL REVIEW B, 1996, 53 (07): : 3627 - 3629
  • [3] TEMPERATURE-DEPENDENCE OF THE EXCITON LIFETIME IN HIGH-PURITY SILICON
    HAMMOND, RB
    SILVER, RN
    APPLIED PHYSICS LETTERS, 1980, 36 (01) : 68 - 71
  • [4] SHALLOW-ACCEPTOR, DONOR, FREE-EXCITON, AND BOUND-EXCITON STATES IN HIGH-PURITY ZINC TELLURIDE
    VENGHAUS, H
    DEAN, PJ
    PHYSICAL REVIEW B, 1980, 21 (04): : 1596 - 1609
  • [5] TEMPERATURE-DEPENDENCE OF LASING TRANSITION IN HIGH-PURITY GAAS
    CHINN, SR
    ROSSI, JA
    WOLFE, CM
    APPLIED PHYSICS LETTERS, 1973, 23 (12) : 699 - 701
  • [6] SHALLOW ACCEPTOR BOUND EXCITON AND FREE EXCITON-STATES IN HIGH-PURITY ZINC TELLURIDE
    VENGHAUS, H
    DEAN, PJ
    SOLID STATE COMMUNICATIONS, 1979, 31 (11) : 897 - 900
  • [7] TEMPERATURE-DEPENDENCE OF POSITRON LIFETIME IN HIGH-PURITY POLYCRYSTALLINE NI
    LYNN, KG
    GOLAND, AN
    HURST, JJ
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 233 - 233
  • [8] TRANSVERSE MAGNETORESISTANCE AND ITS TEMPERATURE-DEPENDENCE FOR HIGH-PURITY POLYCRYSTALLINE ALUMINUM
    KREVET, B
    SCHAUER, W
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3656 - 3669
  • [9] SHALLOW-DONOR PROFILES AND ZERO MAGNETIC-FIELD FIR PHOTOCONDUCTIVITY SPECTRA OF HIGH-PURITY INDIUM-PHOSPHIDE
    REEDER, AA
    CHAMBERLAIN, JM
    TURNER, RJ
    HILL, G
    SOLID STATE COMMUNICATIONS, 1986, 57 (05) : 355 - 359
  • [10] EXPERIMENTAL INVESTIGATION OF PRESSURE AND TEMPERATURE-DEPENDENCE OF PHOTOABSORPTION OF HIGH-PURITY XENON GAS
    KOEHLER, HA
    REDHEAD, DL
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (04): : 672 - 672
123