COMPUTER-SIMULATION OF THE TRANSIENT PROCESS OF ZNSMN THIN-FILM ELECTROLUMINESCENCE

被引：0
|
作者：
ZHANG, ZL
ZHANG, BX
ZHAO, WM
JIANG, XY
LIU, ZG
XU, SH
机构：
[1] Shanghai Univ of Science and, Technology, Shanghai, China
来源：
JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(92)90903-V
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A simplified quantitative physical model for electron transport processes in TFEL is proposed. The dissipative current, brightness waveform and charge voltage characteristics of the device can be calculated from this model. Comparison of the computer simulation with the exerimental results shows that this model is nearly satisfactory. Hence some important parameters of these devices can be obtained by computer simulation.
引用
收藏
页码：1012 / 1015
页数：4
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