EFFECTS OF MULTIPLY-CHARGED GOLD IMPURITY ON BREAKDOWN VOLTAGE OF SILICON P-N JUNCTIONS

被引：5

|

作者：

SAH, CT

SCHRODER, DK

机构：

来源：

APPLIED PHYSICS LETTERS | 1968年 / 12卷 / 04期

关键词：

D O I：

10.1063/1.1651927

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：141 / +

页数：1

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