FORMATION OF FACES IN GERMANIUM AND SILICON CRYSTALS GROWN ACCORDING TO CHOKHRALSKII

被引：0
|
作者：
PETROV, DA
YACHEVA, SK
RUSAKOV, TA
机构：
来源：
DOKLADY AKADEMII NAUK SSSR | 1962年 / 146卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：588 / &
相关论文
共 50 条
  • [1] AXIAL TEMPERATURE GRADIENTS IN GROWING SILICON SINGLE CRYSTALS ACCORDING TO CHOKHRALSKII
    SHASHKOV, YM
    GRISHIN, VP
    DOKLADY AKADEMII NAUK SSSR, 1968, 179 (02): : 404 - &
  • [2] DEFECTS IN CRYSTALS OF SILICON AND GERMANIUM GROWN FROM THE MELT
    BILLIG, E
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (03) : C60 - C60
  • [3] On the formation of boron-germanium pairs in silicon-germanium mixed crystals
    Hattendorf, J
    Zeitz, WD
    Schröder, W
    Abrosimov, NV
    PHYSICA B-CONDENSED MATTER, 2003, 340 : 858 - 862
  • [4] Twin Formation in InP Nanowires Epitaxially Grown on Germanium and Silicon
    Wondergem, Harry
    Bakkers, Erik
    Balkenende, Ruud
    Verheijen, Marcel
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2005, 61 : C386 - C386
  • [5] OSCILLATIONS OF CRYSTALLIZATION FRONT WHEN GROWING SILICON CRYSTALS BY METHOD OF CHOKHRALSKII
    SHASHKOV, YM
    STEPANOV.GM
    DOKLADY AKADEMII NAUK SSSR, 1968, 179 (04): : 840 - &
  • [6] SHAPE-FORMATION OF SILICON MONOCRYSTALS AT GROWING BY CHOKHRALSKII METHOD
    POGODIN, AI
    TUMIN, IM
    EIDENZON, AM
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1973, 37 (11): : 2292 - 2294
  • [7] CRITICAL DENSITY OF DISLOCATIONS IN CRYSTALS GROWN BY CHOKHRALSKII, STEPANOV AND BRIDGMAN METHODS
    TSIVINSKII, SV
    MASLOVA, LA
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1971, 35 (03): : 514 - +
  • [8] Formation process of grown-in defects in Czochralski grown silicon crystals
    Nakamura, K
    Saishoji, T
    Kubota, T
    Iida, T
    Shimanuki, Y
    Kotooka, T
    Tomioka, J
    JOURNAL OF CRYSTAL GROWTH, 1997, 180 (01) : 61 - 72
  • [9] Formation process of grown-in defects in Czochralski grown silicon crystals
    Komatsu Electronic Metals Co Ltd, Kanagawa, Japan
    J Cryst Growth, 1 (61-72):
  • [10] SUPERCOOLING AT CRYSTALLIZATION FRONT WHEN GROWING SINGLE SILICON CRYSTALS BY CHOKHRALSKII TECHNIQUE
    SHASHKOV, YM
    GRISHIN, VP
    DOKLADY AKADEMII NAUK SSSR, 1965, 163 (04): : 942 - &
12345