ELECTRON MOBILITY IN A SEMICONDUCTOR INVERSION LAYER - POSSIBLE CONTRIBUTION FROM BULK PHONONS

被引：46

作者：

EZAWA, H

KAWAJI, S

KURODA, T

NAKAMURA, K

机构：

来源：

SURFACE SCIENCE | 1971年 / 24卷 / 02期

关键词：

D O I：

10.1016/0039-6028(71)90292-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：659 / &

共 8 条

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[5] MEASUREMENT OF ELASTIC CONSTANTS AT LOW TEMPERATURES BY MEANS OF ULTRASONIC WAVES - DATA FOR SILICON AND GERMANIUM SINGLE CRYSTALS, AND FOR FUSED SILICA [J].

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[6] DETERMINATION OF DEFORMATION POTENTIAL CONSTANTS FROM ELECTRON CYCLOTRON RESONANCE IN GERMANIUM AND SILICON [J].

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JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1970, 29 (05) :1248-&

[7] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

STERN, F ;

HOWARD, WE .

PHYSICAL REVIEW, 1967, 163 (03) :816-&

[8]

WILSON AH, 1956, THEORY METALS

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