STABLE OPERATION (OVER 5000-H) OF HIGH-POWER 0.98-MUM INGAAS GAAS STRAINED QUANTUM-WELL RIDGE WAVE-GUIDE LASERS FOR PUMPING ER3+-DOPED FIBER AMPLIFIERS

被引：35

作者：

OKAYASU, M

FUKUDA, M

TAKESHITA, T

UEHARA, S

机构：

[1] NTT Optoelectronics Laboratories, Atsugi-shi, Kanagawa, 243-01, 3-1, Morinosato Wakamiya

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 10期

关键词：

D O I：

10.1109/68.60760

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A maximum output power of 115 mW and a slope efficiency of 0.92 W/ A have been achieved in 0.98-μm InGaAs strained quantum well lasers with a 3-μm-wide ridge waveguide structure for efficient fiber coupling. Stable operation of over 5000 h under 50†C constant power operation with an optical power density of 3.9 MW/cm2 has been demonstrated with a degradation rate as low as 5 x 10 -6 per hour. These results show this device is promising as a practical pumping source for Er3+-doped fiber optical amplifiers. © 1990 IEEE

引用

页码：689 / 691

页数：3

共 5 条

[1] 0.98 MU-M STRAINED INGAAS ALGAAS DOUBLE QUANTUM-WELL LASERS WITH A GAINP BURIED WAVE-GUIDE FOR ER3+-DOPED FIBER AMPLIFIERS
ISHIKAWA, S
FUKAGAI, K
FUJII, H
SAITO, T
ENDO, K
NEC RESEARCH & DEVELOPMENT, 1992, 33 (03): : 383 - 392
[2] HIGH-POWER OPERATION IN 0.98 MU-M STRAINED-LAYER INGAAS-GAAS SINGLE-QUANTUM-WELL RIDGE WAVE-GUIDE LASERS
TAKESHITA, T
OKAYASU, M
UEHARA, S
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (12) : 849 - 851
[3] HIGH-SPEED MODULATION OF STRAINED-LAYER INGAAS-GAAS-ALGAAS RIDGE WAVE-GUIDE MULTIPLE QUANTUM-WELL LASERS
OFFSEY, SD
LESTER, LF
SCHAFF, WJ
EASTMAN, LF
APPLIED PHYSICS LETTERS, 1991, 58 (21) : 2336 - 2338
[4] HIGH-POWER 0.98 MU-M GAINAS STRAINED QUANTUM WELL LASERS FOR ER-3+-DOPED FIBER AMPLIFIER
OKAYASU, M
TAKESHITA, T
YAMADA, M
KOGURE, O
HORIGUCHI, M
FUKUDA, M
KOZEN, A
OE, K
UEHARA, S
ELECTRONICS LETTERS, 1989, 25 (23) : 1563 - 1565
[5] HIGH-POWER 1.02-MU-M INGAAS ALGAAS STRAINED QUANTUM-WELL LASERS WITH GAINP BURIED WAVE-GUIDES FOR PUMPING PR3+-DOPED OPTICAL-FIBER AMPLIFIER
FUKAGAI, K
CHIDA, H
ISHIKAWA, S
FUJII, H
ENDO, K
ELECTRONICS LETTERS, 1993, 29 (02) : 146 - 147

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