共 50 条
- [1] EFFECT OF INHOMOGENEITIES ON AVALANCHE BREAKDOWN VOLTAGE OF A P-N-JUNCTION RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1971, 16 (08): : 1353 - +
- [2] PROBABILITY OF TRIGGERING OF AN AVALANCHE IN BREAKDOWN OF A P-N-JUNCTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07): : 927 - 927
- [3] INSB P-N-JUNCTION WITH AVALANCHE BREAKDOWN BEHAVIOR JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L1874 - L1876
- [4] ANALYTICAL CALCULATION OF AVALANCHE BREAKDOWN PARAMETERS IN HIGH-VOLTAGE DIFFUSED P-N-JUNCTION CHINESE PHYSICS-ENGLISH TR, 1991, 11 (03): : 720 - 725
- [9] PROPERTIES OF A P-N-JUNCTION IN A FERROELECTRIC SEMICONDUCTOR SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (03): : 279 - 283
- [10] CALCULATING FLICKER NOISE OF P-N-JUNCTION DIODES AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1974, 28 (11): : 450 - 454