INFLUENCE OF GAAS SURFACE-STRUCTURE BEFORE SI DEPOSITION ON DELTA-DOPING

被引：0
|
作者：
MOKEROV, VG
MEDVEDEV, BK
KOTELNIKOV, IN
FEDOROV, YV
机构：
来源：
DOKLADY AKADEMII NAUK | 1993年 / 332卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：575 / 577
页数：3
相关论文
共 50 条
  • [1] COMPARISON OF SI DELTA-DOPING WITH HOMOGENEOUS DOPING IN GAAS
    KOHLER, K
    GANSER, P
    MAIER, M
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 720 - 723
  • [2] MBE GROWTH AND CHARACTERIZATION OF DELTA-DOPING IN GAAS AND GAAS/SI
    BASMAJI, P
    CESCHIN, AM
    LI, MS
    HIPOLITO, O
    BERNUSSI, AA
    IIKAWA, F
    MOTISUKE, P
    SURFACE SCIENCE, 1990, 228 (1-3) : 356 - 358
  • [3] A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE DEPOSITION OF SI ON GAAS(001) IMPLICATIONS FOR SI DELTA-DOPING
    AVERY, AR
    HOLMES, DM
    SUDIJONO, JL
    JONES, TS
    FAHY, MR
    JOYCE, BA
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 202 - 208
  • [4] HOLE CONFINEMENT EFFECTS ON MULTIPLE SI DELTA-DOPING IN GAAS
    SHIBLI, SM
    SCOLFARO, LMR
    LEITE, JR
    MENDONCA, CAC
    PLENTZ, F
    MENESES, EA
    APPLIED PHYSICS LETTERS, 1992, 60 (23) : 2895 - 2896
  • [5] X-RAY CHARACTERIZATION OF SI DELTA-DOPING IN GAAS
    HART, L
    FAHY, MR
    NEWMAN, RC
    FEWSTER, PF
    APPLIED PHYSICS LETTERS, 1993, 62 (18) : 2218 - 2220
  • [6] MOLECULAR-BEAM EPITAXIALLY GROWN SI/GAAS INTERFACES - DELTA-DOPING, SI ON GAAS, AND GAAS ON SI
    CROOK, GE
    BRANDT, O
    TAPFER, L
    PLOOG, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 841 - 845
  • [7] Carbon delta-doping in GaAs and AlAs
    Imperial Coll of Science, Technology and Medicine, London, United Kingdom
    Mater Sci Forum, pt 1 (409-414):
  • [8] Delta-doping of Si in GaN by metalorganic chemical vapor deposition
    Kim, JH
    Yang, GM
    Choi, SC
    Choi, JY
    Cho, HK
    Lim, KY
    Lee, HJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (2A): : 681 - 682
  • [9] Carbon delta-doping GaAs superlattices
    Davidson, BR
    Hart, L
    Newman, RC
    Joyce, TB
    Bullough, TJ
    Button, CC
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1996, 7 (05) : 355 - 360
  • [10] THEORETICAL APPROACH TO DELTA-DOPING OF GAAS WITH IN
    WILKE, S
    HENNIG, D
    PHYSICAL REVIEW B, 1991, 43 (15): : 12470 - 12476
12345