GALLIUM-ARSENIDE SURFACE INVERSION USING A NOVEL SILICON SILICON DIOXIDE INSULATOR STRUCTURE

被引：0
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作者：
FOUNTAIN, GG
RUDDER, RA
HATTANGADY, SV
MARKUNAS, RJ
VITKAVAGE, DJ
机构：
来源：
ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS | 1989年 / 144卷
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D O I：
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中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
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页码：537 / 542
页数：6
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