Near-field light emission from semiconductor macroatoms

被引：0
|
作者：
Savasta, S. [1 ]
Pistone, C. [1 ]
Di Stefano, O. [1 ]
Martino, C. [1 ,2 ]
Girlanda, R. [1 ]
机构：
[1] Univ Messina, Dipartiinento Fis Mat Ingn Elettroniea, Saito,Sperone 31, I-98166 Messina, Italy
[2] Univ Messina, Dipartimento Matemat, I-98166 Messina, Italy
来源：
NUOVO CIMENTO C-COLLOQUIA AND COMMUNICATIONS IN PHYSICS | 2008年 / 31卷 / 04期
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D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present a microscopic theoretical analysis of time and spatially resolved photoluminescence of naturally occurring quantum dots induced by monolayer fluctuations in the thickness of semiconductor quantum wells. In particular we study the carrier dynamics and the emission properties of a semiconductor quantum dot under both continuous-wave and pulsed excitations resonant with the barrier energy levels. We show that collection-mode near-field optical microscopy allows the detection of light emission from excitonic dark states. We find that, at low temperature, the second (dark) energy level displays a carrier density significantly larger than that of the lowest energy level. This behaviour is a consequence of carrier trapping due to the symmetry-induced suppression of radiative recombination.
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页码：435 / 443
页数：9
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