INVERSION OF CONDUCTIVITY IN PLASTICALLY DEFORMED N-TYPE SEMICONDUCTORS

Inversion of the conductivity of plastically deformed n-type semiconductors is discussed. It is shown that if the capacitance (C1) of the lower dislocation level E1 is small, then there is a characteristic jump in the chemical potential as a function of the dislocation density. The position of this jump depends on C1. Experimental results confirm the theoretical predictions.