EFFECTS OF ILLUMINATION DURING ANODIZATION OF POROUS SILICON

被引：33
|
作者：
TSAI, C [1 ]
LI, KH [1 ]
CAMPBELL, JC [1 ]
HANCE, BK [1 ]
ARENDT, MF [1 ]
WHITE, JM [1 ]
YAU, SL [1 ]
BARD, AJ [1 ]
机构：
[1] UNIV TEXAS,DEPT CHEM & BIOCHEM,AUSTIN,TX 78712
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 10期
关键词：
POROUS SI; PHOTOLUMINESCENCE; ILLUMINATION EFFECT;
D O I：
10.1007/BF02684209
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of illumination during anodic etching of porous Si have been studied. For a fixed current density and anodization time, it has been observed that below a critical irradiance level, increasing the radiant flux density during anodization results in higher photoluminescence and a blue shift of the photoluminescence spectra. For irradiance above the critical value, the photoluminescence intensity decreases. Transmission Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy and atomic force microscopy have been employed to investigate the effects of illumination on the characteristics of porous Si.
引用
收藏
页码：995 / 1000
页数：6
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