DC SQUID RF AMPLIFIER WITH EXTERNAL MM-WAVE PUMPING AND ITS TESTING BY SIS JUNCTION NOISE

被引：1
|
作者：
TARASOV, MA
BELITSKY, VY
PROKOPENKO, GV
FILIPPENKO, LV
KOSHELETS, VP
机构：
[1] Inst. of Radio Eng. and Electron., Acad. of Sci., Moscow
来源：
SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 1991年 / 4卷 / 11期
关键词：
D O I：
10.1088/0953-2048/4/11/024
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The power gain and the noise temperature of a DC SQUID RF amplifier at a signal frequency 400 MHz were measured in the presence of external microwave radiation at 2 cm, 8 mm and 4 mm wavelengths. We used a four-loop planar DC SQUID with an integrated input coil and very low values of inductances and stray capacitances. In our noise measurements we used an sis junction as a precise source of input noise at high Dc bias voltage V(b) > V2-DELTA. In such a configuration the studied system is the same as an sis mm-wave mixer with a SQUID IF amplifier.
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页码：644 / 646
页数：3
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